Substrate processing apparatus

ABSTRACT

A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 62/880,637, filed on Jul. 30, 2019, in the U.S. Patentand Trademark Office, the disclosure of which is incorporated herein inits entirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate processing apparatus, andmore particularly, to a substrate processing apparatus having animproved exhaust structure.

2. Description of the Related Art

In a semiconductor deposition process, a plasma process can be performedat a low temperature compared to a thermal process, and thus thermalshock to a semiconductor device may be reduced. Furthermore, as thermalshock applied to semiconductor deposition equipment decreases,durability of an apparatus and life of constituent components may beimproved, and thus the plasma process is applied to numerous processes.

In a deposition process using plasma, plasma is generated by applying RFpower to a reactive gas supplied to a reaction space to ionize thereactive gas. An ionized reactive gas is activated to react with asubstrate, thereby forming a thin film on the substrate. Korean PatentPublication No. 10-2019-0032077 and Korean Patent No. 10-1680379disclose the above deposition process using plasma.

Korean Patent Publication No. 10-2019-0032077 discloses an atomic layerdeposition system as a deposition process using plasma. In detail, thedocument discloses an atomic layer deposition system having a structurein which the gas inside a reaction chamber is discharged through a pumpconnected to a pump pipe.

To increase the efficiency of the plasma process as much as possible,plasma needs to be formed on the substrate in the reaction space.However, parasitic plasma that is generated in an area other than thereaction space, for example, an exhaust line, may cause degradation ofthe efficiency of the plasma process in the reaction space.

SUMMARY

One or more embodiments include a substrate processing apparatus whichmay prevent generation of parasitic plasma in an area, such as anexhaust space, other than the reaction space.

One or more embodiments include a substrate processing apparatus havinga gas exhaust structure which implements efficient discharge by reducingthe volume of an exhaust space.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more embodiments, a substrate processing apparatusincludes a substrate support unit configured to support a substrate, aprocessing unit disposed above the substrate support unit, wherein areaction space may be defined between the substrate support unit and theprocessing unit, an exhaust unit providing an exhaust space connected tothe reaction space, and a conductive extension portion surrounding atleast a part of the exhaust space.

The conductive extension portion may be configured to prevent generationof parasitic plasma in the exhaust space.

The conductive extension portion may be grounded.

The conductive extension portion may have a circumference in a shapecorresponding to a shape of the substrate.

The exhaust unit may include a barrier wall disposed between thereaction space and the exhaust space, and a first surface of the barrierwall may define the reaction space and a second surface of the barrierwall may define the exhaust space.

The conductive extension portion may extend along the second surface ofthe barrier wall.

The conductive extension portion may be in contact with the barrierwall.

The substrate processing apparatus may further include a support portionsupporting the processing unit and the exhaust unit, wherein the exhaustunit is disposed between the processing unit and the support portion.

The processing unit may function as a first cover defining an uppersurface of the reaction space, and the exhaust unit may function as asecond cover defining a side surface of the reaction space.

The exhaust unit may include a barrier wall disposed between thereaction space and the exhaust space, an outer wall disposed parallel tothe barrier wall and in contact with the support portion, a connectionwall connecting the barrier wall and the outer wall and providing acontact surface with the processing unit, and the conductive extensionportion extends along the barrier wall, the connection wall, the outerwall, and the support portion.

The conductive extension portion may be electrically connected to thesupport portion to allow the conductive extension portion and thesupport portion to have same electric potential.

The substrate processing apparatus may further include a conductive ringin contact with the conductive extension portion.

The support portion may include a groove and the conductive ring may beaccommodated in the groove.

The substrate processing apparatus may further include a conductive ringelectrically connected to the conductive extension portion.

The conductive ring may include an elastic body.

The substrate processing apparatus may further include an exhaust pathconnected to the exhaust space, wherein the conductive extension portionincludes an opening providing a connection between the exhaust space andthe exhaust path.

The conductive extension portion may include a first part and a secondpart with the opening therebetween, and the first part and the secondpart may be separated from each other.

The conductive extension portion may extend in the form of an open ringin which at least parts of the conductive extension portion may beseparated from each other.

According to one or more embodiments, a substrate processing apparatusincludes a substrate support unit, a first cover disposed on thesubstrate support unit and including at least one processing unit; asecond cover disposed under the first cover and including a barrierwall, a conductive extension portion extending from the barrier wall andin contact with the second cover, wherein a reaction space is defined byan outer surface of the barrier wall, an upper surface of the substratesupport unit, and a lower surface of the first cover, the second coverincludes an exhaust space connected to the reaction space, and theconductive extension portion is grounded and extends from an innersurface of the barrier wall to surround at least a part of the exhaustspace.

According to one or more embodiments, a substrate processing apparatusincludes a reaction space and an exhaust space connected to the reactionspace, the substrate processing apparatus including a groundedconductive extension portion disposed in the exhaust space andconfigured to prevent generation of parasitic plasma in the exhaustspace.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIGS. 1 and 2 schematically illustrate a substrate processing apparatusaccording to an embodiment;

FIG. 3 schematically illustrates a substrate processing apparatusaccording to another embodiment;

FIGS. 4 and 5 schematically illustrate substrate processing apparatusesaccording to embodiments;

FIGS. 6 and 7 are perspective views illustrating an exhaust duct and aninner cover that are separated from each other in a substrate processingapparatus according to an embodiment;

FIG. 8 is a perspective view illustrating an exhaust duct, an innercover, and a conductive ring separated from one another in a substrateprocessing apparatus according to an embodiment;

FIGS. 9 to 11 schematically illustrate a substrate processing apparatusaccording to some embodiments; and

FIGS. 12 to 14 schematically illustrate a substrate processing apparatusaccording to embodiments.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects of the present description.

Terms used in the present specification are used for explaining aspecific embodiment, not for limiting the present disclosure. Thus, anexpression used in a singular form in the present specification alsoincludes the expression in its plural form unless clearly specifiedotherwise in context. Also, terms such as “include” or “comprise” may beconstrued to denote a certain characteristic, number, step, operation,constituent element, or a combination thereof, but may not be construedto exclude the existence of or a possibility of addition of one or moreother characteristics, numbers, steps, operations, constituent elements,or combinations thereof. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.

It will be understood that, although terms first, second, third, etc.,may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of embodiments.

Hereinafter, the embodiments of the present disclosure are described indetail with reference to the accompanying drawings. In the drawings, theillustrated shapes may be modified according to, for example,manufacturing technology and/or tolerance. Thus, the embodiment of thepresent disclosure may not be construed to be limited to a particularshape of a part described in the present specification and may include achange in the shape generated during manufacturing, for example.

FIGS. 1 and 2 schematically illustrate a substrate processing apparatusaccording to an embodiment. FIG. 1 illustrates a substrate processingapparatus and a part of the substrate processing apparatus (a section ofa portion of an exhaust unit 120 where no opening is formed). FIG. 2illustrates the substrate processing apparatus and another part of thesubstrate processing apparatus (a section of a portion of the exhaustunit 120 where an opening OP is formed).

Referring to FIGS. 1 and 2, the substrate processing apparatus mayinclude a partition wall 100, a substrate support unit 150, a processingunit 110, the exhaust unit 120, and a conductive extension portion 130.A reaction space 51 and an exhaust space 55 connected to the reactionspace 51 may be formed in the substrate processing apparatus.

The partition wall 100, which is a chamber for accommodating thesubstrate support unit 150, may be referred to as a chamber main body.In an embodiment, a reactor including the reaction space 51 may bereferred to as an inner chamber, and the overall structure of thesubstrate processing apparatus surrounding a plurality of reactors, forexample, four reactors, may be referred to as an external chamber. Theexhaust line 18 may be provided inside the partition wall 100. In someembodiments, the exhaust line 18 may be formed to extend along theinterior of a side wall of the partition wall 100. In an embodiment, thesubstrate processing apparatus may include a first surface and a secondsurface adjacent to the first surface, the exhaust line 18 may extendalong an edge between the first surface and the second surface. Inadditional embodiments, the exhaust line 18 may extend along theinterior of a lower wall of the partition wall 100.

The processing unit 110 may be disposed above the substrate support unit150 configured to support a substrate. The reaction space 51 may bedefined between the substrate support unit 150 and the processing unit110. The processing unit 110 may function as a first cover for definingan upper surface of the reaction space 51. In other words, the firstcover disposed above the substrate support unit 150 may include at leastone processing unit 110.

The processing unit 110 may include members that perform appropriatefunctions based on the functions of the substrate processing apparatus.For example, when the substrate processing apparatus performs adeposition function, the processing unit 110 may include a reactionmaterial supply portion, for example, a shower head assembly. In anotherembodiment, when a reactor performs a polishing function, the processingunit 110 may include a polishing pad.

The processing unit 110 may be a conductor and may be used as anelectrode for generating plasma. In other words, the processing unit 110may function as an electrode for generating plasma. The processing unit110 of the above type (the processing unit 110 is used as an electrode)may be referred to as a gas supply electrode in the followingdescription.

The substrate support unit 150 may be configured to provide an area onwhich an object to be processed (not shown) such as a semiconductor or adisplay substrate is placed. The substrate support unit 150 may besupported by a support portion (not shown) capable of moving up/down androtating. Furthermore, the substrate support unit 150 may be a conductorand may be used as an electrode for generating plasma, that is, acounter electrode of the gas supply electrode.

The exhaust unit 120 may be disposed between the processing unit 110 anda support portion TLD. The exhaust unit 120 may extend to surround thereaction space 51. The exhaust unit 120 may be implemented by anon-conductive material, for example, an insulating material. Incontrast, the support portion TLD may be implemented by a conductivematerial, for example a conductor. Accordingly, a potential differencemay be formed between the exhaust unit 120 that is disposed between theprocessing unit 110 functioning as an electrode and the support portionTLD implemented by a conductor, and the exhaust space 55 in the exhaustunit 120. The potential difference may cause parasitic plasma, and asdescribed below, as the conductive extension portion 130 is introducedin the exhaust unit 120, the above-mentioned potential difference may beoffset, and thus generation of parasitic plasma may be prevented.

In an embodiment, the exhaust unit 120 may function as a second coverthat defines a side surface of the reaction space 51. The second coverincluding the exhaust unit 120 may include the exhaust space 55connected to the reaction space 51. Accordingly, the exhaust unit 120may provide the exhaust space 55. Furthermore, the exhaust unit 120 mayprovide a space for accommodating the processing unit 110. When theprocessing unit 110 is accommodated in the space, the processing unit110 may be in contact with the exhaust unit 120.

The exhaust unit 120 may include a barrier wall W disposed between thereaction space 51 and the exhaust space 55. A first surface, forexample, an outer surface, of the barrier wall W, may define thereaction space 51, and a second surface, that is, an inner surface as asurface facing the first surface, of the barrier wall W, may define theexhaust space 55. For example, the reaction space 51 may be defined bythe first surface of the barrier wall W, an upper surface of thesubstrate support unit 150, and a lower surface of the processing unit110 that is the first cover. In other words, the side portion of thereaction space 51 may be limited by the barrier wall W of the exhaustunit 120.

The exhaust unit 120 may provide a part of a space for processing anobject to be processed. For example, when the substrate processingapparatus performs a deposition function, the reaction space 51 fordeposition may be defined by the exhaust unit 120. Furthermore, theexhaust space 55 may be defined in the exhaust unit 120.

The conductive extension portion 130 may be configured to preventgeneration of parasitic plasma in the exhaust space 55. For example, theconductive extension portion 130 may extend surrounding at least a partof the exhaust space 55, or may be grounded. Accordingly, the exhaustspace 55 may be surrounded by the conductive extension portion 130, andthus generation of parasitic plasma in the exhaust space 55 may beprevented.

The conductive extension portion 130 may extend from an inner surface ofthe exhaust space 55. The conductive extension portion 130 may extendfrom the barrier wall W. Furthermore, the conductive extension portion130 may be disposed in contact with the exhaust unit 120 that is thesecond cover. As a detailed example, the conductive extension portion130 may be in contact with the second surface, that is, an innersurface, of the barrier wall W that defines the exhaust space 55, andthe conductive extension portion 130 may extend along the secondsurface.

In an example, the exhaust unit 120 may include a connection wall C andan outer wall O extending from the barrier wall W. The outer wall O ofthe exhaust unit 120 may be arranged parallel to the barrier wall W, andmay be in contact with the support portion TLD. The connection wall C ofthe exhaust unit 120 may extend to connect the barrier wall W to theouter wall O. The connection wall C may provide a contact surface to theprocessing unit 110. The processing unit 110 that is the first cover andthe exhaust unit 120 that is the second cover may be in contact witheach other by the contact surface.

The conductive extension portion 130 may extend along the barrier wallW, the connection wall C, and the outer wall O of the exhaust unit 120.In other words, the conductive extension portion 130, as illustrated inFIG. 2, may extend to entirely surround the exhaust space 55, except aninterval E adjacent to the barrier wall W connecting the reaction space51 and the exhaust space 55 in a first section of the exhaust unit 120.The conductive extension portion 130 formed as above may be disposedbetween a center of the exhaust space 55 and the exhaust unit 120. In anadditional embodiment, one surface of the conductive extension portion130 disposed between the center of the exhaust space 55 and the exhaustunit 120 may be in contact with the exhaust unit 120.

In an optional embodiment, the conductive extension portion 130 mayextend along the barrier wall W, the connection wall C, the outer wallO, and the support portion TLD. In other words, the conductive extensionportion 130 may extend from the exhaust unit 120 toward the supportportion TLD. Accordingly, the conductive extension portion 130 may be incontact with the support portion TLD. The conductive extension portion130 may be electrically connected to the support portion TLD, andaccordingly the conductive extension portion 130 and the support portionTLD may have the same electric potential. For example, when the supportportion TLD is grounded, the conductive extension portion 130 may begrounded as well.

The conductive extension portion 130 may extend surrounding a part ofthe exhaust space 55 in a second section of the exhaust unit 120. Forexample, the conductive extension portion 130 may include an openingthat provides communication between the exhaust space 55 and an exhaustpath. In an example, the opening may be implemented in the form of agroove. In another example, the opening may be implemented in the formof a hole. In another example, the conductive extension portion 130 mayhave a first part and a second part with the opening therebetween, andthe opening may be formed such that the first part and the second partare separated from each other, that is, the conductive extension portion130 has a cut shape. In this case, the conductive extension portion 130may extend in the form of an open ring in which at least a part of theconductive extension portion 130 is separated therefrom.

The conductive extension portion 130 may extend to have a circumferencein a shape corresponding to the shape of a substrate. In this case, afirst area defined by a circumference formed as the barrier wall W ofthe conductive extension portion 130 may be greater than a second areadefined by the substrate. Furthermore, a third area defined by acircumference formed as the outer wall O of the conductive extensionportion 130 may be greater than the first area defined by the barrierwall W and the second area defined by the substrate.

For example, when the substrate is a circular substrate, the barrierwall W of the conductive extension portion 130 may also extend to have ashape of a first circle. Furthermore, the outer wall O of the conductiveextension portion 130 may also extend to have a shape of a secondcircle. In this case, a distance from a center of the reaction space 51to the barrier wall W, that is, a radius of the first circle may begreater than a radius of the substrate. Furthermore, a distance from thecenter of the reaction space 51 to the outer wall O, that is, a radiusof the second circle may be greater than a radius of the first circle.

In an optional embodiment, the substrate processing apparatus mayfurther include a conductive ring 12. The conductive ring 12 may beelectrically connected to the conductive extension portion 130. Theconductive ring 12 may be disposed to contact the conductive extensionportion 130. For example, the conductive ring 12 may be disposed tocontact the conductive extension portion 130 and the support portion TLDbetween the conductive extension portion 130 and the support portionTLD. Accordingly, the conductive extension portion 130 may beelectrically connected to the support portion TLD via the conductivering 12. Accordingly, when the support portion TLD is grounded, theconductive extension portion 130 may be grounded as well.

In an optional embodiment, the conductive ring 12 may include an elasticbody. In an example, the elastic body may be configured to haveelasticity in a direction, for example, a vertical direction, extendingfrom the conductive extension portion 130 to the support portion TLD. Inanother example, as illustrated in FIG. 2, the support portion TLD mayinclude a groove, and the conductive ring 12 may be disposed by beingaccommodated in the groove.

The support portion TLD may support the processing unit 110 and theexhaust unit 120 by contacting the exhaust unit 120. The support portionTLD may be supported by a partition wall 100. As such, the supportportion TLD may support the processing unit 110 that is the first coverand the exhaust unit 120 that is the second cover, and the supportportion TLD may function as a top lid that covers the external chamberby being supported by the partition wall 100.

The support portion TLD may be disposed between the partition wall 100and the exhaust port 13. The support portion TLD may include a path Pconnecting the exhaust port 13 and the exhaust line 18 of the partitionwall 100. In an embodiment, the sectional area of the path P and thesectional area of the exhaust line 18 may be substantially the same. Forexample, when the path P and the exhaust line 18 are formed in acircular shape, the diameter of the path P may be the same as thediameter of the exhaust line 18. In an additional embodiment, a sealingmember (not shown) may be disposed between the support portion TLD andthe partition wall 100. The sealing member may extend along thecircumference of the path P or the circumference of the exhaust line 18,and thus prevent the leakage of a gas flowing from the path P to theexhaust line 18.

The support portion TLD may be disposed between the partition wall 100and a cover, for example, the second cover including the exhaust unit120. A flow control ring (FCR) may be disposed on the support portionTLD. Furthermore, the flow control ring FCR may be disposed between thesupport portion TLD and the substrate support unit 150. The flow controlring FCR may be disposed to be slidable on the support portion TLD. Theflow control ring FCR may be spaced apart from the substrate supportunit 150 forming a gap G, and pressure balance between the reactionspace 51 and an inner space of the external chamber may be controlled byadjusting the gap G.

To achieve the pressure balance, a filling gas may be introduced towardthe reaction space 51 from a lower space under the support portion TLDand the substrate support unit 150. By the filling gas, a gas curtainmay be formed in a gap G between the substrate support unit 150 and agas flow control ring FCR. The gas curtain may prevent the gas in thereaction space 51 from being introduced into the lower space.

In an embodiment, the filling gas may be a gas different from the gassupplied through the processing unit 110. For example, the filling gasmay be an inert gas such as nitrogen or argon. In some embodiments, thefilling gas may be a gas having a discharge rate lower than thedischarge rate of the gas supplied to the reaction space 51 through theprocessing unit 110. When plasma is generated in the reaction space 51,the filling gas having a low discharge rate may prevent generation ofparasitic plasma in the lower space under the support portion TLD andthe substrate support unit 150.

The barrier wall W may provide a gap E connecting the reaction space 51and the exhaust space 55. For example, the gap E may be formed betweenthe exhaust unit 120 and the flow control ring FCR. The gap E mayfunction as a channel between the reaction space 51 and the exhaustspace 55. Accordingly, the reaction space 51 and the exhaust space 55may communicate with each other through the channel.

In the above structure, the gas in the reaction space 51 is dischargedthrough the exhaust space 55 in a lateral direction. In other words, thegas of the reaction space 51 may be discharged through the exhaust space55, the opening OP, a channel in the exhaust port 13, the path P of thesupport portion TLD, and the exhaust line 18 of the partition wall 100.The gas exhaust structure may have an improved gas discharge efficiencycompared with a downstream gas exhaust structure, that is, a structurein which the gas of the reaction space 51 is discharged through thelower space under the substrate support unit 150. In detail, a lateralgas exhaust structure according to embodiments may have the followingtechnical advantages.

1) Reduction of volume of exhaust space—While in a downstream gasexhaust structure, the lower space under the substrate support unit 150is used as a space for exhaust, in contrast, in the lateral gas exhauststructure, only the exhaust space 55 in the exhaust unit 120 is used asa space for exhaust. Accordingly, the volume of the exhaust space isreduced. Accordingly, the atomic layer deposition process which requiresa fast switching of different gases may be facilitated, and acontamination source due to a residual gas may be reduced.

2) Improvement of exhaust speed—As the volume of the exhaust space isreduced, the amount of an exhaust gas may be reduced, and consequentlythe exhaust speed may be improved.

3) Reduction of residual gas—As a larger amount of gas may be dischargedfor a limited time, the residual gas in the reaction space and theexhaust space may be reduced.

4) Improvement of durability—Durability may be improved due to thereduction of a residual gas. Furthermore, as the residual gas havingreactivity is not discharged through the lower space, the life ofcomponents located in the lower space may be extended.

5) Prevention of leakage of gas—As the exhaust gas is discharged throughthe interior of the chamber wall, that is, through the exhaust line 18of the partition wall 100, the leakage of an exhaust gas may beprevented.

Referring back to FIG. 2, a part of the exhaust unit 120 that is thesecond cover may communicate with an exhaust port 13. The exhaust port13 may be connected to at least a part of the exhaust unit 120. Forexample, the exhaust port 13 may be disposed to communicate with a partof the circumference of the exhaust unit 120 (see FIG. 14). Accordingly,a gas in a part of the exhaust space 55 may be exhausted through theexhaust port 13.

In detail, the gas supplied to the center of the reaction space 51through the processing unit 110 may be radially distributed.Accordingly, the radially distributed gas may move toward the exhaustspace 55 of the exhaust unit 120. As the exhaust port 13 is connected toa part of the circumference of the exhaust unit 120, the gas radiallydistributed may flow toward the exhaust space 55 along an inner path ofthe exhaust unit 120. The gas flowing along the inner path of theexhaust unit 120 may be discharged through the opening OP and theexhaust port 13.

The exhaust port 13 may include a channel extending in a first directiontoward the exhaust unit 120 and a second direction different from thefirst direction. In an embodiment, a channel having an L shape or anL-like shape may be formed in the exhaust port 13. Accordingly, the gasin the exhaust space 55 may be introduced in a lateral direction towardthe exhaust port 13 and exhausted in a downward direction. In anotherexample, the gas in the exhaust space 55 may be introduced in thelateral direction and exhausted in an upward direction. The gasexhausted through the exhaust port 13 may be transferred to an exhaustpump (not shown) through the exhaust line 18, and the gas may beexhausted to the outside by the exhaust pump.

FIG. 3 schematically illustrates a substrate processing apparatusaccording to another embodiment. The substrate processing apparatusaccording to the present embodiment may be a modified example of thesubstrate processing apparatus according to the above-describedembodiment. Redundant descriptions between the embodiments are omitted.

Referring to FIG. 3, in the substrate processing apparatus, a contactwall 2 and the substrate support unit 150 may form the reaction space 51while having face-contact and face-sealing. The substrate is mounted onthe substrate support unit 150 and for loading/unloading of thesubstrate, a lower portion of the substrate support unit 150 may beconnected to an apparatus (not shown) capable of moving up/down.

The exhaust space 55 according to the present embodiment may be formedon the reaction space 51. In this case, the exhaust unit 120 that formsan exhaust space and the conductive extension portion 130 that extendsin contact with the exhaust unit 120 may be formed above the reactionspace 51. For example, the exhaust unit 120 and the conductive extensionportion 130 may be formed above the processing unit 110.

The barrier wall W may be disposed between the reaction space 51 and theexhaust space 55. The first surface of the barrier wall W, for example,a face facing the processing unit 110, may define the reaction space 51.The second surface, that is, the surface opposite to the first surface,of the barrier wall W may define the exhaust space 55. For example, thereaction space 51 may be defined by the first surface of the barrierwall W, the upper surface of the substrate support unit 150, and thelower surface of the processing unit 110.

The barrier wall W may provide the gap E connecting the reaction space51 and the exhaust space 55. As described above, the gap E may functionas a communicating channel connecting between the reaction space 51 andthe exhaust space 55.

The conductive extension portion 130 may extend along the second surfaceof the barrier wall W. The conductive extension portion 130 may extendto entirely surround the exhaust space 55, except the gap E adjacent tothe barrier wall W. The conductive extension portion 130 may begrounded, and accordingly, generation of parasitic plasma in the exhaustspace 55 may be prevented. Accordingly, power loss due to the generationof parasitic plasma may be prevented.

FIGS. 4 and 5 schematically illustrate substrate processing apparatusesaccording to embodiments. The substrate processing apparatuses accordingto the embodiments may be modified examples of the substrate processingapparatus according to the above-described embodiment. Redundantdescriptions between the embodiments are omitted below.

Referring to FIG. 4, a reactive gas may be supplied to a reaction space9 via a gas inlet 8 and a gas supply plate 3. The reactive gas may reactwith a substrate (not shown), thereby forming a thin film on thesubstrate placed on a heater block 4. Then, the reactive gas may beexhausted to the outside though an exhaust space 10 in the exhaust duct5, via a gap formed between the reaction space 9 and an exhaust duct 5.

In an embodiment, the exhaust duct 5 and a flow control ring (FCR) 6 mayinclude a non-conductive material or ceramic. The gas supply plate 3 maybe a showerhead, and may be connected to an RF rod 2 to function as anupper electrode. The heater block 4 may be connected to a ground tofunction as a lower electrode.

In a plasma process, the reactive gas introduced into the reaction space9 may be excited by RF power supplied through the RF rod 2 and the gassupply plate 3. The excited reactive gas may be ionized, and thus plasmamay be generated. Plasma A generated in the reaction space 9 maycontribute to the process on the substrate, but may be generated in theexhaust space 10 too.

The plasma A in the reaction space 9 may be generated due to a potentialdifference between an upper electrode 3 and a lower electrode 4connected to a ground. Likewise, a potential difference is generatedbetween the upper electrode 3 and a top lid 7 facing the upper electrode3 and connected to the ground, and thus plasma B may be generated in theexhaust space 10.

The plasma B generated in the exhaust space 10 may be referred to asparasitic plasma, which does not contribute to a substrate processingprocess, but deteriorates the efficiency of the plasma A in reactionspace. For example, as part of RF power generated by an RF generator isused for generation of parasitic plasma, the RF power contributing to anactual reaction is reduced that much. Accordingly, efficiency of theplasma process may deteriorate, and thus the substrate process may beunstable.

In contrast, referring to FIG. 5, in a substrate processing apparatusaccording to an embodiment, an inner cover 11 may be inserted into theexhaust space 10 in the exhaust duct 5. In detail, the inner cover 11may be inserted between the exhaust duct 5 and a central portion of theexhaust space 10. The inner cover 11 may include a conductive material,for example, a metal material.

In an embodiment, the conductive ring 12 may be inserted in a stepcorner portion between the top lid 7 and the flow control ring 6. Theinner cover 11 and the conductive ring 12 may be in contact with eachother, and thus the inner cover 11 and the top lid 7 are electricallyconnected to each other. Accordingly, the potential difference may beremoved between the inner cover 11 and the top lid 7.

In an additional embodiment, the inner cover 11 may be in a closecontact with the exhaust duct 5 with no space between the exhaust duct 5and the inner cover 11. Accordingly, even when a gas exists in theexhaust space 10, the inner cover 11 may be located in a ground regionas the top lid 7. Also, as no space exists between the exhaust duct 5and the inner cover 11, in the plasma process, parasitic plasma may notbe generated in the exhaust space 10.

FIGS. 6 and 7 are perspective views illustrating that the exhaust duct 5and the inner cover 11 included in a substrate processing apparatusaccording to an embodiment are separated from each other. The exhaustduct 5 and the inner cover 11 according to the embodiments may bemodified examples of the exhaust unit and the conductive extensionportion, respectively, according to the above-described embodiments.Redundant descriptions between the embodiments are omitted.

Referring to FIG. 6, the exhaust port 13 may be provided on a surface ofthe exhaust duct 5 and may be disposed between the exhaust space 10 andan exhaust line (not shown). Accordingly, an exhaust gas may bedischarged to the exhaust line via the exhaust port 13. The exhauststructure may correspond to the structures of FIGS. 1 and 2, that is,the structure in which the gas of the exhaust space 55 is discharged tothe exhaust line implemented in the partition wall 100 via the exhaustport 13.

As it may be seen from the structure of the exhaust port 13 in FIG. 6,the exhaust line may be disposed in an upper surface of the exhaust port13. The structure of the exhaust line is distinguished from thestructure of the exhaust line being disposed in a lower surface of theexhaust port 13 in the embodiment of FIGS. 1 and 2.

In an embodiment, an open portion 14 may be implemented in a surface ofthe inner cover 11. The open portion 14 may have a structure in the formof a groove and be obtained by cutting off a part of the inner cover 11.In an optional embodiment, the open portion 14 may be implemented in theform of an opening O of FIG. 2.

The open portion 14 may be formed between the exhaust space 10 and theexhaust port 13 and may function as a path through which the exhaust gasis discharged to the exhaust port 13. Furthermore, the open portion 14may provide a buffer space with respect to thermal expansion of theinner cover 11 in a high-temperature process.

FIG. 7 illustrates a modified example of the inner cover 11 of FIG. 6.Referring to FIG. 7, a part of the open portion 14 of the inner cover 11may be cut off from the inner cover 11. In other words, a part of theopen portion 14 in the form of a groove, which is obtained by cuttingoff a part of the inner cover 11, may separate the inner cover 11. Inthis case, the inner cover 11 may have a shape of an open ring in whichat least some parts of the inner cover 11 are separated from each other.

In the high-temperature process, as a thermal expansion coefficient ofthe inner cover 11 that is conductive is greater than that of theexhaust duct 5 that is non-conductive, the exhaust duct 5 may bedeformed or damaged as the inner cover 11 expands. However, as describedabove, by removing a partial area of the inner cover 11, even when theinner cover 11 is deformed due to the thermal expansion, the shape andarrangement of the inner cover 11 may be maintained. As a result, in thehigh-temperature process, the damage of the exhaust duct 5 may beprevented.

FIG. 8 is a perspective view illustrating that the exhaust duct 5, theinner cover 11, and the conductive ring 12 included in a substrateprocessing apparatus according to an embodiment are separated from oneanother. The exhaust duct 5, the inner cover 11, and the conductive ring12 according to the embodiment may be modified examples of those of theabove-described embodiments. Redundant descriptions between theembodiments are omitted.

Referring to FIG. 8, the inner cover 11 that is a conductive cover mayhave a first part P1 and a second part P2 with the open portion 14 thatis an opening therebetween, and the first part P1 and the second part P2may be separated from each other. While the open portion 14 of the innercover 11 of FIG. 7 is implemented in the form of a groove by cutting offa part of the inner cover 11, the open portion 14 of the inner cover 11of FIG. 8 is implemented by entirely cutting off a part of the innercover 11.

The conductive ring 12 may be disposed under the inner cover 11. Theconductive ring 12 may include a material having superior thermalconductivity, in detail, a metal material. The conductive ring 12 mayperform the following two functions.

1) Prevention of generation of parasitic plasma in the exhaust space 10:As the conductive ring 12 physically contacts the inner cover 11disposed between the exhaust space 10 and the exhaust duct 5, apotential difference of the inner cover 11 may be the same as thepotential difference of the top lid 7 connected to a ground electrode.Accordingly, the generation of parasitic plasma in the exhaust space 10may be prevented.

2) Buffering deformation of the inner cover 11 due to thermal expansionat high temperature: The inner cover 11 that includes a conductivematerial may be deformed and may expand at high temperature. Theconductive ring 12 may buffer the inner cover 11 that thermally expandbetween the inner cover 11 and the top lid 7. Accordingly, the exhaustduct 5, the inner cover 11, and the top lid 7 may be prevented frombeing deformed or damaged due to thermal expansion.

To this end, the conductive ring 12 may be implemented by an elasticbody having elasticity in a vertical direction. The elastic body mayincrease a contact area between the inner cover 11 and the conductivering 12. Accordingly, the inner cover 11 may have the same potentialdifference as the ground electrode through the conductive ring 12.

As described above, according to the above-described embodiments, byinserting the inner cover and the conductive ring between the innercover and the top lid in the exhaust space of the substrate processingapparatus and adjusting a potential difference therebetween, generationof parasitic plasma in the exhaust line of the reactor in the plasmaprocess may be prevented. Furthermore, by introducing the structure ofremoving a part of the inner cover, the damage of the exhaust duct dueto the thermal expansion of the inner cover in the high-temperatureprocess may be prevented.

FIGS. 9 to 11 schematically illustrate a substrate processing apparatusaccording to some embodiments. In detail, FIG. 9 illustrates a portion,for example, the exhaust lines 18 and 28, a connection port CP, or anexternal path EC connected to the external pump, of the substrateprocessing apparatus except for the cover, that is, the processing unitand the exhaust unit, and the exhaust port. FIG. 10 illustrates thesubstrate processing apparatus of FIG. 9 viewed from a first direction,and FIG. 11 illustrates the substrate processing apparatus of FIG. 9viewed from a second direction. The substrate processing apparatusaccording to these embodiments may be a modified example of thesubstrate processing apparatus according to the above-describedembodiments. Redundant descriptions between the embodiments below may beomitted.

Referring to FIGS. 9 to 11, the exhaust lines 18 and 28 are formed inthe interior of the partition wall 100. The exhaust lines 18 and 28 areconnected to the external path EC through the connection port CP, andthe external path EC is connected to a main exhaust path 211.Accordingly, the gas in the reaction space is discharged to an exhaustpump EP through the exhaust ports 13 and 23, the exhaust lines 18 and28, the external path EC, and the main exhaust path 211.

As illustrated in FIG. 10, two reactors R1 a and R1 b in the firstdirection use inner exhaust lines 18; 18 a, and 18 b, and the other tworeactors in a direction opposite to the first direction use otherinternal exhaust lines 28; 28 a, and 28 b. The two inner exhaust lines18 and 28 are connected to the external path EC respectively through theconnection ports CP and CP′. The external path EC may be implemented byone configuration or by a plurality of configurations.

In FIG. 10, it may be seen that four reactors use at least one externalpath EC, the main exhaust path 211, and the exhaust pump EP. The mainexhaust path 211 may be further provided with an isolation valve 210.Accordingly, during a maintenance period, the isolation valve 210 mayprotect the exhaust pump EP from the outside atmosphere. Furthermore, apressure control valve, for example, a throttle valve, may be added tothe main exhaust path 211. The external path EC may be fixed and not tomove in close contact with the lower surface of the partition wall 100of the external chamber. In an optional embodiment, without the externalpath EC, the two inner exhaust lines 18 and 28 may be connected to eachother in the interior of a bottom wall of the partition wall 100 of theexternal chamber so as to be directly connected to the main exhaust path211.

Referring back to FIG. 9, the first external path EC connected to thefirst connection port CP may extend toward a first corner portion C1 ofthe external chamber under the partition wall 100. Furthermore, a secondexternal path EC′ connected to a second connection port (CP′ of FIG. 11)may extend toward a second corner portion C2 of the external chamberunder the partition wall 100. The exhaust pump EP may be disposed on onesurface of the substrate processing apparatus, for example,corresponding to the center between the first corner portion C1 and thesecond corner portion C2. The first external path EC may extend from aportion extending from the first corner portion C1 toward the exhaustpump EP. Furthermore, likewise, the second external path EC′ may extendfrom a portion extending form the second corner portion C2 toward theexhaust pump EP.

FIGS. 12 to 14 schematically illustrate a substrate processing apparatusaccording to embodiments. The substrate processing apparatus accordingto these embodiments may be a modified example of the substrateprocessing apparatus according to the above-described embodiments.Redundant descriptions between the embodiments below may be omitted.

Referring to FIG. 12, a top surface of a multi-reactor chamber 311 isillustrated. A plurality of reactors R are disposed inside the chamber311 and one side of each reactor R is connected to an exhaust port 313.In FIG. 12, it may be seen that each reactor R is connected to eachexhaust port 313.

A plurality of exhaust lines 318 may be formed in the interior of apartition wall of the chamber 311. For example, the chamber 311 may havea rectangular shape, and the exhaust lines 318 may include a firstexhaust line, a second exhaust line, a third exhaust line, and a fourthexhaust line. In some embodiments, the first exhaust line to the fourthexhaust line may be disposed corresponding to four vertexes of therectangle.

The chamber 311 may include a first reactor, a second reactor, a thirdreactor, and a fourth reactor. Each reactor may include a substratesupport unit, a processing unit, an exhaust unit, and an exhaust port.

In detail, the first reactor may include a first substrate support unit(not shown) accommodated in the partition wall of the chamber 311, afirst processing unit 312 a on the first substrate support unit, a firstexhaust unit 314 a connected to a first reaction space between the firstsubstrate support unit and the first processing unit 312 a, and a firstexhaust port 313 a connected to at least a part of the first exhaustunit 314 a. In this case, the first exhaust port 313 a may be configuredto connect the first exhaust unit 314 a with the first exhaust line 318a in the interior of the partition wall.

The second reactor may include a second substrate support unit (notshown) accommodated in the partition wall of the chamber 311, a secondprocessing unit 312 b on the second substrate support unit, a secondexhaust unit 314 b connected to a second reaction space between thesecond substrate support unit and the second processing unit 312 b, anda second exhaust port 313 b connected to at least a part of the secondexhaust unit 314 b. In this case, the second exhaust port 313 b may beconfigured to connect the second exhaust unit 314 b with the secondexhaust line 318 b in the interior of the partition wall.

The third reactor may include a third substrate support unit (not shown)accommodated in the partition wall of the chamber 311, a thirdprocessing unit 312 c on the third substrate support unit, a thirdexhaust unit 314 c connected to a third reaction space between the thirdsubstrate support unit and the third processing unit 312 c, and a thirdexhaust port 313 c connected to at least a part of the third exhaustunit 314 c. In this case, the third exhaust port 313 c may be configuredto connect the third exhaust unit 314 c with a third exhaust line 318 cin the interior of the partition wall.

The fourth reactor may include a fourth substrate support unit (notshown) accommodated in the partition wall of the chamber 311, a fourthprocessing unit 312 d on the fourth substrate support unit, a fourthexhaust unit 314 d connected to a fourth reaction space between thefourth substrate support unit and the fourth processing unit 312 d, anda fourth exhaust port 313 d connected to at least a part of the fourthexhaust unit 314 d. In this case, the fourth exhaust port 313 d may beconfigured to connect the fourth exhaust unit 314 d with the fourthexhaust line 318 d in the interior of the partition wall.

In connection with FIGS. 9 to 12, as described above, the substrateprocessing apparatus may further include the first connection port (CPin FIGS. 9 and 11) connecting the first exhaust line and the secondexhaust line and the second connection port (CP′ in FIGS. 9 and 11)connecting the third exhaust line and the fourth exhaust line.Furthermore, the substrate processing apparatus may further include atleast one of the external paths (EC and EC′ in FIG. 9) connecting thefirst connection port and the exhaust pump (EP in FIG. 10) andconnecting the second connection port and the exhaust pump. The externalpaths EC and EC′ may be disposed outside the partition wall of thechamber 311.

FIG. 13 illustrates a side perspective view of the reactor R. Thereaction space of the reactor R may be defined to be a space surroundedby a cover having the exhaust unit 314 like an exhaust duct, a gas flowcontrol ring (FCR) 315 disposed under the cover, a processing unit, forexample, a shower head (not shown), disposed in an inner spacesurrounded by the exhaust unit 314, and a substrate support unit, forexample, a heater (not shown), disposed to face the processing unit.

The exhaust unit 314 and the gas flow control ring 315 are spaced apartfrom each other forming an interval therebetween. For example, aseparation space of about 1 mm may be formed, and the gas in thereaction space may be discharged to an exhaust pump (not shown) throughthe interval, that is, the separation space, and through an exhaustspace 316 in the exhaust unit 314 and the exhaust port 313. The exhaustport 313 may include a channel through which the gas is discharged in adownward direction.

In FIGS. 13 and 14, a gas discharged path is indicated by arrows. As canbe seen from the drawings, according to the present disclosure, thelateral gas exhaust structure in which the gas is discharged through theinterior of the wall of the main body of the chamber is employed.

The gas supplied from upper portion of the reactor toward the reactionspace through the processing unit 312 may be radially distributed. Theradially distributed gas may flow toward the exhaust space 316 of theexhaust unit 314. The gas radially distributed toward the exhaust space316 may be discharged to the exhaust space 316 via a gap between theexhaust unit 314 and the gas flow control ring 315. The gas isdischarged to the outside through the exhaust port 313 connected to onesurface of the exhaust unit 314.

As such, the lateral gas exhaust structure is provided in which the gasremaining in the reaction space is discharged through a side surface ofa reactor. In detail, the exhaust lines 318 formed in the interior ofthe partition wall are formed in the interiors of the side wall and thelower wall of the main body of the chamber 311 and the exhaust lines 318and the exhaust unit 314 are communicated with each other through theexhaust port 313.

In general, a multi-reactor chamber according to the related art adoptsa downstream exhaust structure in which a gas is discharged to a chamberlower space, in detail, a lower space of a substrate loading unitincluding a heater block on which a substrate is mounted. Although theabove chamber has a merit of a simple apparatus configuration, such adownstream exhaust structure requires a large amount of time tocompletely discharge the gas due to a large volume of the chamber lowerspace. Furthermore, for the atomic layer deposition process thatrequires rapid exchange of different gases, before the first dischargedgas is not completely discharged, a subsequently discharged differentgas may be introduced into the chamber lower space. This causes chemicalreaction between the remaining gas and the subsequently discharged gas,thereby generating unnecessary solid reaction byproducts. The reactionbyproducts may cause contamination of a chamber and a substrate.Furthermore, as the reaction byproducts are deposited on a lower surfaceof the substrate loading unit including parts disposed in a lowerportion of the chamber, for example, the heating block, the durabilityof the apparatus may deteriorate and the efficiency and performance ofthe moving unit may deteriorate. This may reduce a preventivemaintenance cycle (PM cycle), and thus productivity may be decreased andmaintenance costs may be increased.

In contrast, in the substrate processing apparatus according to theabove-described embodiments, the above problems may be addressed byusing the exhaust lines formed in the interiors of the side wall and thelower wall of the chamber main body. In other words, as the volume ofthe exhaust space is reduced, the remaining gas in the exhaust space maybe reduced. Furthermore, as the exhaust gas is prevented from contactingthe parts disposed inside the chamber, for example, the lower part ofthe substrate loading unit and the moving unit, the deterioration ofdurability of the constituent elements of the chamber due to the exhaustgas may be prevented. Furthermore, the PM cycle may be increased and themaintenance cost may be reduced. Furthermore, the risk of leaking theexhaust gas may be reduced by using the interior of the wall of thechamber.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the disclosure as defined by thefollowing claims.

What is claimed is:
 1. A substrate processing apparatus comprising: asubstrate support unit configured to support a substrate; a processingunit disposed above the substrate support unit, wherein a reaction spaceis defined between the substrate support unit and the processing unit;an exhaust unit providing an exhaust space connected to the reactionspace; and a conductive extension portion surrounding at least a part ofthe exhaust space.
 2. The substrate processing apparatus of claim 1,wherein the conductive extension portion is configured to preventgeneration of parasitic plasma in the exhaust space.
 3. The substrateprocessing apparatus of claim 1, wherein the conductive extensionportion is grounded.
 4. The substrate processing apparatus of claim 1,wherein the conductive extension portion has a circumference in a shapecorresponding to a shape of the substrate.
 5. The substrate processingapparatus of claim 1, wherein the exhaust unit comprises a barrier walldisposed between the reaction space and the exhaust space, and a firstsurface of the barrier wall defines the reaction space, and a secondsurface of the barrier wall defines the exhaust space.
 6. The substrateprocessing apparatus of claim 5, wherein the conductive extensionportion extends along the second surface of the barrier wall.
 7. Thesubstrate processing apparatus of claim 5, wherein the conductiveextension portion is in contact with the barrier wall.
 8. The substrateprocessing apparatus of claim 1, further comprising: a support portionsupporting the processing unit and the exhaust unit, wherein the exhaustunit is disposed between the processing unit and the support portion. 9.The substrate processing apparatus of claim 8, wherein the processingunit functions as a first cover defining an upper surface of thereaction space, and the exhaust unit functions as a second coverdefining a side surface of the reaction space.
 10. The substrateprocessing apparatus of claim 8, wherein the exhaust unit comprises: abarrier wall disposed between the reaction space and the exhaust space;an outer wall disposed parallel to the barrier wall and in contact withthe support portion; and a connection wall connecting the barrier walland the outer wall and providing a contact surface with the processingunit, and the conductive extension portion extends along the barrierwall, the connection wall, the outer wall, and the support portion. 11.The substrate processing apparatus of claim 10, wherein the conductiveextension portion is electrically connected to the support portion toallow the conductive extension portion and the support portion to havesame electric potential.
 12. The substrate processing apparatus of claim11, wherein the support portion comprises a groove, and the conductivering is accommodated in the groove.
 13. The substrate processingapparatus of claim 10, further comprising: a conductive ring in contactwith the conductive extension portion.
 14. The substrate processingapparatus of claim 13, wherein the conductive ring is implemented by anelastic body having elasticity in a vertical direction so as to increasea contact area between the conductive extension portion and theconductive ring.
 15. The substrate processing apparatus of claim 1,further comprising: a conductive ring electrically connected to theconductive extension portion.
 16. The substrate processing apparatus ofclaim 15, wherein the conductive ring comprises an elastic body.
 17. Thesubstrate processing apparatus of claim 1, further comprising: anexhaust path connected to the exhaust space, wherein the conductiveextension portion comprises an opening providing a connection betweenthe exhaust space and the exhaust path.
 18. The substrate processingapparatus of claim 17, wherein the conductive extension portioncomprises a first part and a second part with the opening therebetween,and the first part and the second part are separated from each other.19. The substrate processing apparatus of claim 1, wherein theconductive extension portion extends in the form of an open ring inwhich at least parts of the conductive extension portion are separatedfrom each other.
 20. A substrate processing apparatus comprising: asubstrate support unit; a first cover disposed on the substrate supportunit and comprising at least one processing unit; a second coverdisposed under the first cover and comprising a barrier wall; and aconductive extension portion extending from the barrier wall and incontact with the second cover, wherein a reaction space is defined by anouter surface of the barrier wall, an upper surface of the substratesupport unit, and a lower surface of the first cover, the second covercomprises an exhaust space connected to the reaction space, and theconductive extension portion is grounded and extends from an innersurface of the barrier wall to surround at least a part of the exhaustspace.
 21. A substrate processing apparatus including a reaction spaceand an exhaust space connected to the reaction space, the substrateprocessing apparatus comprising: a grounded conductive extension portiondisposed in the exhaust space and configured to prevent generation ofparasitic plasma in the exhaust space.